BD243 Datasheet, PDF (3/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,65W)

BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS633AH
V_CE = 4 V
T_C = 25°C
t_p = 300 µs, duty cycle < 2%
100
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS633AE
10
I_C = 300 mA
I_C = 1 A
I_C = 3 A
I_C = 6 A
1·0
10
0·1
1·0
0·1
1·0
I_C - Collector Current - A
Figure 1.
0·01
10
0·001
0·01
0·1
1·0
10
I_B - Base Current - A
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS633AF
1·2
V_CE = 4 V
T_C = 25°C
1·1
1·0
0·9
0·8
0·7
0·6
0·1
1·0
10
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3