BD241D Datasheet, PDF (3/6 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS631AH
V_CE = 4 V
t_p = 300 µs, duty cycle < 2%
T_C = 25°C
T_C = 80°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS631AB
10
100
10
0·01
0·1
1·0
I_C - Collector Current - A
Figure 1.
1·0
0·1
I_C = 100 mA
I_C = 300 mA
I_C = 1 A
I_C = 3 A
0·01
10
0·1
1·0
10
100
1000
I_B - Base Current - mA
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AC
1·0
V_CE = 4 V
T_C = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
10
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3