TIP33 Datasheet, PDF (2/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,40-100V,80W)

TIP33, TIP33A, TIP33B, TIP33C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V_{(BR)CEO breakdown voltage}
Collector-emitter
I_{CES cut-off current}
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE
h_fe
|h_fe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
I_C = 30 mA
(see Note 5)
V_CE = 80 V
V_CE = 100 V
V_CE = 120 V
V_CE = 140 V
V_CE = 30 V
V_CE = 60 V
V_EB = 5 V
V_CE = 4 V
V_CE = 4 V
I_B = 0.3 A
I_B = 2.5 A
V_CE = 4 V
V_CE = 4 V
V_CE = 10 V
V_CE = 10 V
I_B = 0
V_BE = 0
V_BE = 0
V_BE = 0
V_BE = 0
I_B = 0
I_B = 0
I_C = 0
I_C = 1 A
I_C = 3 A
I_C = 3 A
I_C = 10 A
I_C = 3 A
I_C = 10 A
I_C = 0.5 A
I_C = 0.5 A
TIP33
40
TIP33A
60
TIP33B
80
TIP33C
100
TIP33
0.4
TIP33A
0.4
TIP33B
0.4
TIP33C
0.4
TIP33/33A
0.7
TIP33B/33C
0.7
1
40
(see Notes 5 and 6)
20
100
1
(see Notes 5 and 6)
4
1.6
(see Notes 5 and 6)
3
f = 1 kHz
20
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.56 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on
Turn-on time
t_off
Turn-off time
I_C = 6 A
V_BE(off) = -4 V
I_B(on) = 0.6 A
R_L = 5 Ω
I_B(off) = -0.6 A
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
0.6
µs
1
µs
PRODUCT INFORMATION
2