TIP31D Datasheet, PDF (2/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,120-160V,40W)

TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V_{(BR)CEO breakdown voltage}
Collector-emitter
I_{CES cut-off current}
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE
h_fe
|h_fe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
I_C = 30 mA
(see Note 5)
V_CE = 160 V
V_CE = 180 V
V_CE = 200 V
V_CE = 90 V
V_EB = 5 V
V_CE = 4 V
V_CE = 4 V
I_B = 750 mA
V_CE = 4 V
V_CE = 10 V
V_CE = 10 V
I_B = 0
V_BE = 0
V_BE = 0
V_BE = 0
I_B = 0
I_C = 0
I_C = 1 A
I_C = 3 A
I_C = 3 A
I_C = 3 A
I_C = 0.5 A
I_C = 0.5 A
TIP31D
TIP31E
TIP31F
TIP31D
TIP31E
TIP31F
120
140
160
0.2
0.2
0.2
0.3
1
25
(see Notes 5 and 6)
5
(see Notes 5 and 6)
2.5
(see Notes 5 and 6)
1.8
f = 1 kHz
20
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.125 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on
Turn-on time
t_off
Turn-off time
I_C = 1 A
V_BE(off) = -4.3 V
I_B(on) = 0.1 A
R_L = 30 Ω
I_B(off) = -0.1 A
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
0.5
µs
2
µs
PRODUCT INFORMATION
2