TIP150 Datasheet, PDF (2/7 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,300-400V,80W)

TIP150, TIP151, TIP152
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIP150
300
Collector-base
V_{(BR)CBO breakdown voltage}
I_C = 1 mA
I_E = 0
TIP151
350
TIP152
400
TIP150
300
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_C = 10 mA
I_B = 0
TIP151
350
(see Note 4)
TIP152
400
I_CEO
Collector-emitter
cut-off current
Collector-emitter
I_{CEX(sus) sustaining current}
V_CE = 300 V
V_CE = 350 V
V_CE = 400 V
V_CLAMP = V_(BR)CEO
I_B = 0
I_B = 0
I_B = 0
TIP150
TIP151
TIP152
250
250
250
7
Emitter cut-off
I_{EBO current}
V_EB = 8 V
I_C = 0
15
Forward current
h_FE
transfer ratio
Collector-emitter
V_{CE(sat) saturation voltage}
V_BE(sat)
V_EC
Base-emitter
saturation voltage
Parallel diode
forward voltage
V_CE = 5 V
V_CE = 5 V
V_CE = 5 V
I_B = 10 mA
I_B = 100 mA
I_B = 250 mA
I_B = 100 mA
I_B = 250 mA
I_E = 7 A
I_C = 2.5 A
I_C = 5 A
I_C = 7 A
I_C = 1 A
I_C = 2 A
I_C = 5 A
I_C = 2 A
I_C = 5 A
I_B = 0
150
(see Notes 4 and 5)
50
15
1.5
(see Notes 4 and 5)
1.5
2
2.2
(see Notes 4 and 5)
2.3
(see Notes 4 and 5)
3.5
Small signal forward
h_fe
current transfer ratio ^{VCE = 5 V}
I_C = 0.5 A
f = 1 kHz
200
|h_fe|
Small signal forward
current transfer ratio
V_CE = 5 V
I_C = 0.5 A
f = 1 MHz
10
C_ob Output capacitance
V_CB = 10 V
I_E = 0
f = 1 MHz
100
NOTES: 4. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
V
µA
A
mA
V
V
V
pF
thermal characteristics
R_θJC
R_θJA
C_θC
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
Thermal capacitance of case
MIN TYP MAX UNIT
1.56 °C/W
62.5 °C/W
0.9
J/°C
inductive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_sv
Voltage storage time
t_si
t_rv
t_ti
Current storage time
Voltage transition time
Current transition time
I_C = 5 A
V_(clamp) = V_(BR)CEO
I_B(on) = 250 mA
t_xo Cross-over time
R_BE = 47 Ω
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
3.9
µs
4.7
µs
1.2
µs
1.2
µs
2.0
µs
PRODUCT INFORMATION
2