TIP145 Datasheet, PDF (2/6 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_CEO
Collector-emitter
cut-off current
I_CBO
Collector cut-off
current
I_EBO
h_FE
V_CE(sat)
V_BE
V_EC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
I_C = -30 mA
(see Note 5)
V_CE = -30 V
V_CE = -40 V
V_CE = -50 V
V_CB = -60 V
V_CB = -80 V
V_CB = -100 V
V_EB = -5 V
V_CE = -4 V
V_CE = -4 V
I_B = -10 mA
I_B = -40 mA
V_CE = -4 V
I_E = -10 A
I_B = 0
I_B = 0
I_B = 0
I_B = 0
I_E = 0
I_E = 0
I_E = 0
I_C = 0
I_C = -5 A
I_C = -10 A
I_C = -5 A
I_C = -10 A
I_C = -10 A
I_B = 0
TIP145
TIP146
TIP147
TIP145
TIP146
TIP147
TIP145
TIP146
TIP147
-60
-80
-100
-2
-2
-2
-1
-1
-1
-2
(see Notes 5 and 6)
1000
500
-2
(see Notes 5 and 6)
-3
(see Notes 5 and 6)
-3
(see Notes 5 and 6)
-3.5
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on
Turn-on time
t_off
Turn-off time
I_C = -10 A
V_BE(off) = 4.2 V
I_B(on) = -40 mA
R_L = 3 Ω
I_B(off) = 40 mA
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
0.9
µs
11
µs
PRODUCT INFORMATION
2