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TIP130 Datasheet, PDF (2/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,60-100V,70W)
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TIP130, TIP131, TIP132
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE
Cobo
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Output capacitance
Parallel diode
forward voltage
IC = 30 mA
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 16 mA
IB = 30 mA
VCE = 4 V
VCB = 10 V
IE = 8 A
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = 1 A
IC = 4 A
IC = 4 A
IC = 6 A
IC = 4 A
IE = 0
IB = 0
TIP130
60
(see Note 5)
TIP131
80
TIP132
100
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
TC = 100°C
TC = 100°C
TC = 100°C
TIP130
TIP131
TIP132
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
500
1000
(see Notes 5 and 6)
0.5
0.5
0.5
0.2
0.2
0.2
1
1
1
5
15000
2
3
2.5
200
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
pF
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.78 °C/W
62.5 °C/W
PRODUCT INFORMATION
2
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