TIP110 Datasheet, PDF (2/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.0A,60-100V,50W)

TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_CEO
Collector-emitter
cut-off current
I_CBO
Collector cut-off
current
I_EBO
h_FE
V_CE(sat)
V_BE
V_EC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
I_C = 30 mA
(see Note 5)
V_CE = 30 V
V_CE = 40 V
V_CE = 50 V
V_CB = 60 V
V_CB = 80 V
V_CB = 100 V
V_EB = 5 V
V_CE = 4 V
V_CE = 4 V
I_B = 8 mA
V_CE = 4 V
I_E = 4 A
I_B = 0
I_B = 0
I_B = 0
I_B = 0
I_E = 0
I_E = 0
I_E = 0
I_C = 0
I_C = 1 A
I_C = 2 A
I_C = 2 A
I_C = 2 A
I_B = 0
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
60
80
100
2
2
2
1
1
1
2
(see Notes 5 and 6)
1000
500
(see Notes 5 and 6)
2.5
(see Notes 5 and 6)
2.8
(see Notes 5 and 6)
3.5
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on
Turn-on time
t_off
Turn-off time
I_C = 2 A
V_BE(off) = -5 V
I_B(on) = 8 mA
R_L = 15 Ω
I_B(off) = -8 mA
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
2.6
µs
4.5
µs
PRODUCT INFORMATION
2