TIC216 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – SILICON TRIACS

TIC216 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
V_TM
I_H
I_L
dv/dt
dv/dt_(c)
Peak on-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
I_TM = ±8.4 A
V_supply = +12 V†
V_supply = -12 V†
V_supply = +12 V†
V_supply = -12 V†
V_DRM = Rated V_DRM
V_DRM = Rated V_DRM
I_G = 50 mA
I_G = 0
I_G = 0
(see Note 7)
I_G = 0
I_TRM = ±8.4 A
(see Note 6)
Init’ I_TM = 100 mA
Init’ I_TM = -100 mA
T_C = 110°C
T_C = 70°C
±1.7
30
-30
50
-20
±50
V
mA
mA
V/µs
±5
V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t_p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R_G = 100 Ω, t_p(g) = 20 µs, t_r = ≤ 15 ns, f = 1 kHz.
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.5 °C/W
62.5 °C/W
PRODUCT INFORMATION
2