TIC126 Datasheet, PDF (2/6 Pages) Power Innovations Ltd – SILICON CONTROLLED RECTIFIERS

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
I_DRM
I_RRM
I_GT
V_GT
I_H
V_T
dv/dt
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
On-state voltage
Critical rate of rise of
off-state voltage
V_D = rated V_DRM
V_R = rated V_RRM
I_G = 0
V_AA = 12 V
V_AA = 12 V
t_p(g) ≥ 20 µs
V_AA = 12 V
t_p(g) ≥ 20 µs
V_AA = 12 V
t_p(g) ≥ 20 µs
V_AA = 12 V
Initiating I_T = 100 mA
V_AA = 12 V
Initiating I_T = 100 mA
I_T = 12 A
R_L = 100 Ω
R_L = 100 Ω
R_L = 100 Ω
R_L = 100 Ω
(see Note 5)
V_D = rated V_D
I_G = 0
T_C = 110°C
T_C = 110°C
t_p(g) ≥ 20 µs
T_C = - 40°C
T_C = 110°C
T_C = - 40°C
T_C = 110°C
2
mA
2
mA
8
20
mA
2.5
0.8 1.5
V
0.2
100
40
1.4
400
mA
V
V/µs
NOTE 5: This parameter must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.4 °C/W
62.5 °C/W
PRODUCT INFORMATION
2