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BDW23 Datasheet, PDF (2/6 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS
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BDW23, BDW23A, BDW23B, BDW23C
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
Emitter cut-off
current
Forward current
hFE
transfer ratio
VCE(sat)
VBE(sat)
VBE(on)
VEC
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = 100 mA
IB = 0
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
IB = 8 mA
IB = 60 mA
IB = 8 mA
VCE = 3 V
VCE = 3 V
IE = 2 A
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = 1 A
IC = 2 A
IC = 6 A
IC = 2 A
IC = 6 A
IC = 2 A
IC = 1 A
IC = 6 A
IB = 0
(see Note 3)
BDW23
45
BDW23A
60
BDW23B
80
BDW23C
100
BDW23
BDW23A
BDW23B
BDW23C
BDW23
BDW23A
BDW23B
BDW23C
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
1000
750
100
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2
20000
2
3
2.5
2.5
3
1.8
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.5 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn-on time
toff
Turn-off time
IC = 3 A
VBE(off) = -4.5 V
IB(on) = 12 mA
RL = 10 Ω
IB(off) = -12 mA
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
5
µs
PRODUCT INFORMATION
2
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