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BDT61 Datasheet, PDF (2/6 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS
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BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDT61
60
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
IB = 0
(see Note 3)
BDT61A
80
BDT61B
100
BDT61C
120
VCE = 30 V
IB = 0
BDT61
0.5
ICEO
Collector-emitter
cut-off current
VCE = 40 V
VCE = 50 V
IB = 0
IB = 0
BDT61A
0.5
BDT61B
0.5
VCE = 60 V
IB = 0
BDT61C
0.5
VCB = 60 V
IE = 0
BDT61
0.2
VCB = 80 V
IE = 0
BDT61A
0.2
VCB = 100 V
IE = 0
BDT61B
0.2
ICBO
Collector cut-off
current
VCB = 120 V
VCB = 30 V
IE = 0
IE = 0
TC = 150°C
BDT61C
BDT61
0.2
2.0
VCB = 40 V
IE = 0
TC = 150°C
BDT61A
2.0
VCB = 50 V
IE = 0
TC = 150°C
BDT61B
2.0
VCB = 60 V
IE = 0
TC = 150°C
BDT61C
2.0
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
5
Forward current
hFE
transfer ratio
VCE = 3 V
IC = 1.5 A
(see Notes 3 and 4)
750
Collector-emitter
VCE(sat) saturation voltage
IB = 6 mA
IC = 1.5 A
(see Notes 3 and 4)
2.5
Base-emitter
VBE(on) voltage
VCE = 3 V
IC = 1.5 A
(see Notes 3 and 4)
2.5
Parallel diode
VEC forward voltage
IE = 1.5 A
IB = 0
2
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.5 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn-on time
toff
Turn-off time
IC = 2 A
VBE(off) = -5 V
IB(on) = 8 mA
RL = 20 Ω
IB(off) = -8 mA
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
4.5
µs
PRODUCT INFORMATION
2
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