TIPP110 Datasheet, PDF (1/6 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

Copyright © 1997, Power Innovations Limited, UK
q 20 W Pulsed Power Dissipation
q 100 V Capability
q 2 A Continuous Collector Current
q 4 A Peak Collector Current
TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
LP PACKAGE
(TOP VIEW)
E
1
C
2
3
B
MDTRAB
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (I_E = 0)
RATING
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Pulsed power dissipation (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t_p ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. V_CE = 20 V, I_C = 1 A, P_W = 10 ms, duty cycle ≤ 2%.
TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
P_T
T_j
T_stg
T_L
VALUE
60
80
100
60
80
100
5
2
4
50
0.8
20
-55 to +150
-55 to +150
260
UNIT
V
V
V
A
A
mA
W
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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