TIPL762 Datasheet, PDF (1/8 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

Copyright © 1997, Power Innovations Limited, UK
TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 6 A Continuous Collector Current
q Operating Characteristics Fully Guaranteed
B
at 100°C
q 1000 Volt Blocking Capability
C
q 120 W at 25°C Case Temperature
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (I_E = 0)
RATING
Collector-emitter voltage (V_BE = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for t_p ≤ 10 ms, duty cycle ≤ 2%.
TIPL762
TIPL762A
TIPL762
TIPL762A
TIPL762
TIPL762A
SYMBOL
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
VALUE
850
1000
850
1000
400
450
10
6
12
120
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1