BUV47 Datasheet, PDF (1/8 Pages) Mospec Semiconductor – POWER TRANSISTORS(9A,400V,90W)

Copyright © 1997, Power Innovations Limited, UK
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 9 A Continuous Collector Current
q 1000 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-emitter voltage (V_BE = -2.5 V)
RATING
Collector-emitter voltage (R_BE = 10 Ω)
Collector-emitter voltage (I_B = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for t_p ≤ 5 ms, duty cycle ≤ 2%.
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
SYMBOL
V_CEX
V_CER
V_CEO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
VALUE
850
1000
850
1000
400
450
9
15
3
6
120
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1