BUT11 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Silicon diffused power transistors

Copyright © 1997, Power Innovations Limited, UK
BUT11
NPN SILICON POWER TRANSISTOR
MAY 1989 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 100 W at 25°C Case Temperature
q 5 A Continuous Collector Current
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I_E = 0)
Collector-emitter voltage (V_BE = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for t_p ≤ 10 ms, duty cycle ≤ 2%.
SYMBOL
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
VALUE
850
850
400
10
5
10
100
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1