BUPD1520 Datasheet, PDF (1/5 Pages) Power Innovations Ltd – NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Copyright © 1999, Power Innovations Limited, UK
BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
G Designed for Self Oscillating Inverter
Applications
G Rugged 1500 V Planar Construction
G Integral Free-Wheeling Anti-Parallel Diode
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
device symbol
C
B
E
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (I_B = 0)
Collector-emitter voltage (V_BE = 0)
Emitter-base voltage (I_C = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTE 1: This value applies for t_p = 10 ms, duty cycle ≤ 2%.
SYMBOL
V_CEO
V_CES
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
T_L
VALUE
700
1500
11
2
2.5
2
2.5
50
-55 to +125
-55 to +150
300
UNIT
V
V
V
A
A
A
A
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1