BULD50KC Datasheet, PDF (1/10 Pages) Power Innovations Ltd – NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Copyright © 1997, Power Innovations Limited, UK
BULD50KC, BULD50SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
FEBRUARY 1994 - REVISED SEPTEMBER 1997
q Designed Specifically for High Frequency
Electronic Ballasts
TO-220 PACKAGE
(TOP VIEW)
q Integrated Fast t_rr Anti-Parallel Diode,
Enhancing Reliability
q Diode t_rr Typically 1 µs
q New Low-Height SL Power Package,
TO220 Pin-Compatible
q Tightly Controlled Transistor Storage Times
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
q Voltage Matched Integrated Transistor and
Diode
SL PACKAGE
(TOP VIEW)
q Characteristics Optimised for Cool Running
q Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast t_rr anti-
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
B
C
E
device symbol
B
1
2
3
C
E
absolute maximum ratings at 25°C ^¦ (unless otherwise noted)
RATING
Collector-emitter voltage (V_BE = 0)
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
NOTES: 1. This value applies for t_p = 1 s.
2. This value applies for t_p = 10 ms, duty cycle ≤ 2%.
BULD50KC
BULD50SL (see Note 1)
BULD50KC
BULD50SL (see Note 1)
¦ ≤ 25°C case temperature for BULD50KC, and ≤ 25°C ambient temperature for BULD50SL
SYMBOL
V_CES
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
VALUE
600
600
400
9
3.5
6
1.5
2.5
UNIT
V
V
V
V
A
A
A
A
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1