BULD25D Datasheet, PDF (1/12 Pages) Power Innovations Ltd – NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Copyright © 1997, Power Innovations Limited, UK
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
q Designed Specifically for High Frequency
Electronic Ballasts
q Integrated Fast t_rr Anti-parallel Diode,
Enhancing Reliability
q Diode t_rr Typically 500 ns
q New Ultra Low-Height SOIC Power Package
q Tightly Controlled Transistor Storage Times
q Voltage Matched Integrated Transistor and
Diode
q Characteristics Optimised for Cool Running
q Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
q Custom Switching Selections Available
q Surface Mount and Through-Hole Options
PACKAGE
Small-outline
Small-outline taped
and reeled
Single-in-line
PART # SUFFIX
D
DR
SL
D PACKAGE
(TOP VIEW)
B1
NC 2
NC 3
E4
8C
7C
6C
5C
NC - No internal connection
SL PACKAGE
(TOP VIEW)
B
1
C
2
E
3
device symbol
C
B
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
E
switching transistors has tightly controlled
storage times and an integrated fast t_rr anti-parallel diode. The revolutionary design ensures that the diode
has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel
diode plus transistor.
The integrated diode has minimal charge coupling with the transistor, increasing frequency stability,
especially in lower power circuits where the circulating currents are low. By design, this new device offers a
voltage matched integrated transistor and anti-parallel diode.
This device is available in the now well established 8 pin low height surface mount D package, and the TO-
220 pin compatible SL package. Use of the SL package allows for a 40% height saving, making it ideal for
compact ballast applications.
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
Collector-emitter voltage (V_BE = 0)
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
RATING
SYMBOL
V_CES
V_CBO
V_CEO
V_EBO
VALUE
600
600
400
9
UNIT
V
V
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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