BUL770 Datasheet, PDF (1/7 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTOR

Copyright © 1997, Power Innovations Limited, UK
q Designed Specifically for High Frequency
Electronic Ballasts up to 50 W
q h_FE 7 to 21 at V_CE = 1 V, I_C = 800 mA
q Low Power Losses (On-state and Switching)
q Key Parameters Characterised at High
Temperature
q Tight and Reproducible Parametric
Distributions
BUL770
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V_BE = 0)
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for t_p = 10 ms, duty cycle ≤ 2%.
2. This value applies for t_p = 300 µs, duty cycle ≤ 2%.
SYMBOL
V_CES
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_CM
I_B
I_BM
P_tot
T_j
T_stg
VALUE
700
700
400
9
2.5
6
8
1.5
2.5
50
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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