BD745 Datasheet, PDF (1/6 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

Copyright © 1997, Power Innovations Limited, UK
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD746 Series
q 115 W at 25°C Case Temperature
B
q 20 A Continuous Collector Current
q 25 A Peak Collector Current
C
q Customer-Specified Selections Available
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD745
BD745A
BD745B
BD745C
BD745
BD745A
BD745B
BD745C
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
P_tot
½LI_C²
T_A
T_j
T_stg
T_L
50
70
V
90
110
45
60
V
80
100
5
V
20
A
25
A
7
A
115
W
3.5
W
90
mJ
-65 to +150
°C
-65 to +150
°C
-65 to +150
°C
260
°C
NOTES: 1. This value applies for t_p ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on) = 0.4 A, R_BE = 100 Ω,
V_BE(off) = 0, R_S = 0.1 Ω, V_CC = 20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1