BD645 Datasheet, PDF (1/6 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

Copyright © 1997, Power Innovations Limited, UK
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
q Designed for Complementary Use with
BD646, BD648, BD650 and BD652
q 62.5 W at 25°C Case Temperature
q 8 A Continuous Collector Current
q Minimum h_FE of 750 at 3 V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
P_tot
½LI_C²
T_j
T_stg
T_L
80
100
V
120
140
60
80
V
100
120
5
V
8
A
12
A
0.3
A
62.5
W
2
W
50
mJ
-65 to +150
°C
-65 to +150
°C
260
°C
NOTES: 1. This value applies for t_p ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on) = 5 mA, R_BE = 100 Ω,
V_BE(off) = 0, R_S = 0.1 Ω, V_CC = 20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1