BD246 Datasheet, PDF (1/6 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

Copyright © 1997, Power Innovations Limited, UK
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD245 Series
q 80 W at 25°C Case Temperature
B
q 10 A Continuous Collector Current
q 15 A Peak Collector Current
C
q Customer-Specified Selections Available
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (R_BE = 100 Ω)
Collector-emitter voltage (I_C = -30 mA)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD246
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
V_CER
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
P_tot
½LI_C²
T_j
T_stg
T_L
-55
-70
V
-90
-115
-45
-60
V
-80
-100
-5
V
-10
A
-15
A
-3
A
80
W
3
W
62.5
mJ
-65 to +150
°C
-65 to +150
°C
250
°C
NOTES: 1. This value applies for t_p ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on) = -0.4 A, R_BE = 100 Ω,
V_BE(off) = 0, R_S = 0.1 Ω, V_CC = -20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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