H1061 Datasheet, PDF (1/1 Pages) PMC-Sierra, Inc – TRIPLE DIFFUSED SILICON NPN TRANSISTOR

TRIPLE DIFFUSED SILICON NPN TRANSISTOR
… designed for low frequency power amplifier
H1061
MAXIMUM RATINGS
Characteristic
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Peak)
Collector power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
PC
TJ
Tstg
Value
100
80
5
4
8
40
150
-55~150
Unit
V
V
V
A
A
W
°C
°C
1 : Base
2 : Collector (Heat Sink)
3 : Emitter
Unit in mm
TO-220AB
Weight: 1.9g
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Collector Cut Off Current
ICBO
Collector – Emitter Breakdown Voltage V(BR)CEO
DC Current Gain
hFE
Collector Emitter Saturation Voltage
Base Emitter Voltage
Transition Frequency
Collector Out put Capacitance
VCE(sat)
VBE
fT
Cob
Test Condition
VCB = 80V, IE = 0A
IC = 50mA, IB = 0A
VCE = 4V, IC = 1A
VCE = 4V, IC = 0.1A
IC = 2A, IB = 0.2A
VCE = 4V, IC = 1A
VCE = 5V, IC = 0.5A
VCB = 20V, IE = 0A, f=1MHz
Min.
-
80
60
35
-
-
-
-
Typ.
-
-
-
-
-
-
10
40
Max.
100
-
200
-
1
1.5
-
-
Unit
µA
V
-
-
V
V
MHz
Pf
HIGH POWER
DISSIPATION
MEDIUM SPEED
POWER
SWITCHING
Classification of hFE
Rank
B
Range
60 to 120
C
100-200
TO – 220AB
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suitability of its products for any particular purpose, nor does PMC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the
reader therefore we shall not undertake any responsibility for the exercise of rights by third parties.
 PMC Components Pte Ltd. , Singapore, 2000