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TDA8741 Datasheet, PDF (9/24 Pages) NXP Semiconductors – Satellite sound circuit with noise reduction
Philips Semiconductors
Satellite sound circuit with noise reduction
Product specification
TDA8741; TDA8741H
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
VI
Vn
Vn
Tstg
Tamb
PARAMETER
CONDITIONS
supply voltage
note 1
input voltage level on pins 8 and 16
(3 and 11)
note 2
voltage on pins 11, 13, 15, 17, 20, 21,
23 to 26, 31, 33, 35, 37, 40, 41, and 42
(6, 8, 10, 13, 16, 17, 19, 20 to 22, 27, 29,
31, 33, 36, 37 and 38)
note 2
voltage on pins 7, 18, 19, 27 to 30, 32,
36, 38 and 39 (2, 14, 15, 23 to 26, 28,
32, 34 and 35)
note 1
storage temperature
operating ambient temperature
MIN.
0
0
0
0
−55
−20
MAX.
13.2
1
9
VP
+150
+70
UNIT
V
V
V
V
°C
°C
Notes
1. All voltages referenced to ground pins 9 and 34 (4 and 30).
2. All voltages referenced to ground pins 9 and 34 (4 and 30). These voltages must not exceed VP or maximum value
at any time.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient in free air
SDIP42
QFP44
VALUE
53
69
UNIT
K/W
K/W
DC CHARACTERISTICS
All voltages referenced to ground at pins 9 and 34 (4 and 30). Measured in test circuit Fig.4; VP = 12 V; Tamb = 25 °C;
∆fM = ∆fS1 = ∆fS2 = 0 kHz (no modulation); fOM = 6.5 MHz; fOS1 = 10.7 MHz; fOS2 = 10.52 MHz; HF level at pin 18 (14):
40 mV (RMS); HF level at pins 8 and 16 (3 and 11): 20 mV (RMS); MCS = logic 0 [V7 (V2) = 0 V];
SCD = logic 0 [V11 (V6) = 0 V]; unless otherwise specified.
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
VP
supply voltage
8.0
12
13.2 V
IP
supply current
−
38
45
mA
Ptot
total power dissipation
−
−
600
mW
Vn
voltage on pins 20, 21, 23, 24, 25, 27, 28, 30, 32, 33, 35, 36 −
3.8
−
V
and 38 (16, 17, 19, 20, 21, 23, 24, 26, 28, 29, 31, 32 and 34)
VREF
VIN1,IN2
VCDCL,CDCR
VCDCM
IIN3
input reference voltage on pin 19 (15)
voltage on pins 8 and 16 (3 and 11)
voltage on pins 40 and 42 (36 and 38)
voltage on pin 41 (37)
input current at pin 18 (14)
3.7
3.8
3.9
V
−
0
−
V
−
3.0
−
V
−
2.8
−
V
−
−
1
µA
October 1994
9