TDA8561Q_15 Datasheet, PDF (9/24 Pages) NXP Semiconductors – 2 X24 W BTL or 4 X12 W single-ended car radio power amplifier

Philips Semiconductors
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
Product specification
TDA8561Q
AC CHARACTERISTICS
V_P = 14.4 V; R_L = 4 Ω; f = 1 kHz; T_amb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Stereo BTL application (measured in Fig.8)
P_o
output power
note 1
THD = 0.5%
THD = 10%
THD
P_o
total harmonic distortion
output power
P_o = 1 W
V_P = 13.2 V
THD = 0.5%
THD = 10%
B
power bandwidth
THD = 0.5%;
f_l
f_h
G_v
SVRR
low frequency roll-off
high frequency roll-off
closed loop voltage gain
supply voltage ripple rejection
P_o = −1 dB; with respect to 15 W
at −1 dB; note 2
at −1 dB
note 3
on
mute
standby
Z_I
input impedance
V_no
noise output voltage
on
on
mute
R_s = 0 Ω; note 4
R_s = 10 kΩ; note 4
notes 4 and 5
α_cs
∆G_v
channel separation
channel unbalance
R_s = 10 kΩ
DYNAMIC DISTORTION DETECTOR
THD
total harmonic distortion
V₁₆ ≤ 0.6 V; no short-circuit
Quad single-ended application (measured in Fig.9)
P_o
output power
note 1
THD = 0.5%
THD = 10%
THD
P_O
total harmonic distortion
output power
P_o = 1 W
R_L = 2 Ω; note 1
THD = 0.5%
THD = 10%
f_l
low frequency roll-off
at −1 dB; note 2
f_h
high frequency roll-off
at −1 dB
G_v
closed loop voltage gain
MIN.
15
20
−
−
−
−
−
20
25
48
46
80
25
−
−
−
40
−
−
4
5.5
−
7.5
10
−
20
19
TYP.
19
24
0.06
16
20
20 to
15 000
45
−
26
−
−
−
30
70
100
60
60
−
10
5
7
0.06
10
12
25
−
20
MAX. UNIT
−
W
−
W
−
%
−
W
−
W
−
Hz
−
Hz
−
kHz
27
dB
−
dB
−
dB
−
dB
38
kΩ
−
µV
200 µV
−
µV
−
dB
1
dB
−
%
−
W
−
W
−
%
−
W
−
W
−
Hz
−
kHz
21
dB
1999 Jun 30
9