TDA1300T Datasheet, PDF(9/20 Page) NXP Semiconductors – Photodetector amplifiers and laser supplies

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TDA1300T Datasheet, PDF (9/20 Pages) NXP Semiconductors – Photodetector amplifiers and laser supplies

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Philips Semiconductors

Photodetector ampliï¬ers and laser

supplies

Preliminary speciï¬cation

TDA1300T; TDA1300TT

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Reference source VADJ and laser adjustment current IADJ

Vref

reference voltage

RADJ = 48 kâ¦

âT

reference temperature drift

1.15 1.24

1.31

ppm

RSref

IADJ

reference supply rejection

adjustment current

input impedance

multiplying factor (Imon/IADJ)

RADJ = 5.6 kâ¦

RADJ = 4.8 kâ¦

200

ÂµA

kâ¦

Notes to the characteristics

1. The maximum input current is defined as the current in which the gain Gd(n) reaches its minimum. Increasing the

supply voltage to VDD = 5 V increases the maximum input current (see also Figs 4 and 5).

2. The gain increases if a larger supply voltage is used (see Fig.6).

3. Transresistance of 70 kâ¦ and 120 kâ¦ (typical) is only available in N-sub monitor mode (see Table 1).

4. Transresistance of 140 kâ¦ and 240 kâ¦ (typical) is only available in P-sub monitor mode (see Table 1).

5. Output voltage swing will be: VO(RF)(swing) = VO(RF)(max) â VO(RF)(p-p).

6. For single speed the data amplifier gain ratio is defined as gain difference between 1 MHz and 100 kHz, while the

flatness delay is defined up to 1 MHz (see Fig.7). For double speed the data amplifier gain ratio is defined as gain

difference between 2 MHz and 200 kHz, while the flatness delay is defined up to 2 MHz.

1997 Jul 15

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