English
Language : 

PMZB200UNE_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – 30 V, N-channel Trench MOSFET
◁
NXP Semiconductors
5
VGS
(V)
4
aaa-016982
3
2
1
0
0
0.5
1.0
1.5
2.0
QG (nC)
ID = 0.8 A; VDS = 15 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
3
IS
(A)
2
PMZB200UNE
30 V, N-channel Trench MOSFET
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
aaa-016983
1
Tj = 150 °C
VGS = 0 V
Tj = 25 °C
0
0
0.4
0.8
1.2
1.6
2.0
VSD (V)
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
Fig. 18. Duty cycle definition
PMZB200UNE
Product data sheet
t
006aaa812
All information provided in this document is subject to legal disclaimers.
12 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
9 / 14
 ▷