PMXB65UPE_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – 12 V, P-channel Trench MOSFET

NXP Semiconductors
PMXB65UPE
12 V, P-channel Trench MOSFET
-4.5
V_GS
(V)
-3.0
aaa-010896
-1.5
0
0
2
4
6
8
Q_G (nC)
I_D = -3.2 A; V_DS = -6 V; T_amb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
-5
I_S
(A)
-4
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
017aaa137
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
aaa-010897
-3
-2
-1
T_j = 150 °C
T_j = 25 °C
V_GS = 0 V
0
0
-0.4
-0.8
-1.2
V_SD (V)
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t₂
duty cycle δ =
t₁
t₂
t₁
Fig. 18. Duty cycle definition
PMXB65UPE
Product data sheet
t
006aaa812
All information provided in this document is subject to legal disclaimers.
8 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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