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PBSS4540X_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – NPN low VCEsat (BISS) transistor 40 V, 5 A
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NXP Semiconductors
40 V, 5 A
NPN low VCEsat (BISS) transistor
10
VBEsat
(V)
1
(1)
(2)
(3)
001aaa227
10−1
10−1
1
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
10
102
103
104
IC (mA)
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
Product data sheet
PBSS4540X
102
RCEsat
(Ω)
10
001aaa224
1
10−1
(1)
(2)
(3)
10−2
10−1
1
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
10
102
103
104
IC (mA)
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
103
RCEsat
(Ω)
102
(1)
10
(2)
1
(3)
001aaa973
10−1
10−2
10−1
1
10
102
103
104
IC (mA)
10
IC
(A)
8
6
4
2
001aaa221
(1)
(2)
(3)
(4)
(5)
0
0
0.5
1
1.5
2
VCE (V)
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
(1) IB = 25 mA.
(2) IB = 20 mA.
(3) IB = 15 mA.
(4) IB = 10 mA.
(5) IB = 5 mA.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
2004 Nov 04
9
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