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BUW13W Datasheet, PDF (9/12 Pages) NXP Semiconductors – Silicon diffused power transistors
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13W; BUW13AW
handbook, halfpage
+IB
−VBE
VCC
LC
LB
D.U.T.
VCL
MGE246
VCL = 300 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH.
Fig.13 Test circuit inductive load.
handbook, halfpage
tr
90%
IB
10%
90%
IB on
t
−IB off
IC on
IC
10%
tf
ts
toff
t
MGE238
Fig.14 Switching time waveforms with
inductive load.
1997 Aug 13
8