BUT12 Datasheet, PDF (9/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12; BUT12A
handbook, halfpage
+IB
−VBE
VCC
LC
LB
D.U.T.
VCL
MGE246
V_CL = up to 1000 V; V_CC = 30 V; V_BE = −1 to −5 V; L_B = 1 µH;
L_C = 200 µH.
Fig.14 Test circuit inductive load and reverse
bias SOAR.
handbook, halfpage
tr
90%
IB
10%
90%
IB _on
t
−IB _off
IC _on
IC
10%
tf
ts
toff
t
MGE238
Fig.15 Switching time waveforms with
inductive load.
1997 Aug 13
8