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BUK9107-55ATE_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel TrenchPLUS logic level FET
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
2.5
VGS(th)
(V)
max
2
typ
1.5
min
1
03na17
0.5
0
-60 -20
20
60
100
140
Tj
(oC)180
10-1
ID
(A)
10-2
03na18
10-3
10-4
min typ max
10-5
10-6
0
0.5
1
1.5
2
2.5
3
VGS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
gfs140
(S)
120
100
80
60
40
20
0
0
03ne81
20
40
60
80 ID (A) 100
16000
C (pF)
14000
12000
10000
8000
6000
4000
2000
0
10-2
10-1
1
03ne86
Ciss
Coss
Crss
10
102
VDS(V)
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK9107-55ATE_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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