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| BUK7E3R1-40E_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
400
IS
(A)
300
BUK7E3R1-40E
N-channel TrenchMOS standard level FET
003aah134
200
Tj = 175°C
100
Tj = 25 °C
0
0
0.5
1
1.5
2
VSD (V)
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK7E3R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
© NXP B.V. 2012. All rights reserved
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