BUK7905-40AI_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7905-40AI
N-channel TrenchPLUS standard level FET
100
ID
(A)
75
50
25
0
0
03ni90
175 °C
Tj = 25 °C
2
4 _{VGS (V)} 6
10
V_GS
(V)
8
6
4
2
0
0
03ni26
V_DS = 14 V
32 V
40
80
120
Q_G (nC)
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
600
ID/Isense
550
03nn69
4
RD(Is)on
(Ω)
3
03nk33
500
2
450
1
400
4
8
12
16 _{VGS (V)} 20
0
4
6
8 _{VGS (V)} 10
Fig 15. Drain-sense current ratio as a function of
gate-source voltage; typical values
Fig 16. Drain-sense current on-state resistance as a
function of gate-source voltage; typical values
BUK7905-40AI_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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