BUK762R6-40E_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK762R6-40E
N-channel TrenchMOS standard level FET
400
I_S
(A)
320
003aah119
240
160
T_j = 175°C
T_j = 25 °C
80
0
0
0.5
1
V_SD(V) ^1.5
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK762R6-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
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