BUK663R2-40C_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK663R2-40C
N-channel TrenchMOS intermediate level FET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Gate charge waveform definitions
10⁴
C
(pF)
003aae337
C_iss
10
V_GS
(V)
8
6
4
14 V
003aae336
V_DS = 32 V
2
0
0
50
100
150
Q_G (nC)
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
100
I_S
(A)
80
003aae339
60
10³
C_oss
40
C_rss
20
Tj = 175 °C
Tj = 25 °C
10²
10^−1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
0.3
0.6
0.9
1.2
V_SD (V)
V_GS = 0 V
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK663R2-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
9 of 14