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| BUK661R9-40C_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
10
VGS
(V)
8
6
4
2
0
0
14V
003aae254
VDS = 32V
100
200
300
QG (nC)
Fig 13. Gate charge waveform definitions
100
IS
(A)
80
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aae255
60
Tj = 175 °C
Tj = 25 °C
40
20
0
0
0.3
0.6
0.9
1.2
VSD(V)
Fig 15. Source current as a function of source-drain voltage; typical values
BUK661R9-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 18 August 2010
© NXP B.V. 2010. All rights reserved.
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