BLV861 Datasheet, PDF (9/12 Pages) NXP Semiconductors – UHF linear push-pull power transistor

Philips Semiconductors
UHF linear push-pull power transistor
Product specification
BLV861
handbook, h⁵alfpage
Zi
(Ω)
4
3
MGK772
ri
2
1
xi
0
400
500
600
700
800
900
f (MHz)
T_h = 25 °C; V_CE = 28 V; I_CQ = 0.1 A; P_L = 100 W (total device).
Fig.9 Input impedance (per section) as a function
of frequency (series components);
typical values.
handbo_Zok_L, h⁸alfpage
(Ω) ₆
MGK773
4
2
RL
0
−2
XL
−4
−6
400
500
600
700
800
900
f (MHz)
T_h = 25 °C; V_CE = 28 V; I_CQ = 0.1 A; P_L = 100 W (total device).
Fig.10 Load impedance (per section) as a function
of frequency (series components);
typical values.
handboo_Gk_p,¹h²alfpage
(dB)
10
8
MGK774
60
η_C
η_C (%)
50
Gp
40
6
30
4
20
2
10
0
0
400
500
600
700
800
900
f (MHz)
handbook, halfpage
Zi
ZL _MBA451
T_h = 25 °C; V_CE = 28 V; I_CQ = 0.1 A; P_L = 100 W (total device).
Fig.11 Power gain and collector efficiency as
functions of frequency; typical values.
1998 Jan 16
9
Fig.12 Definition of transistor impedance.