BLT70 Datasheet, PDF (9/11 Pages) NXP Semiconductors – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BLT70
handbook,²h⁰alfpage
Zi
(Ω)
16
12
8
4
0
800
850
MGD202
ri
xi
900
950
1000
f (MHz)
40
handbo_Zok_L, halfpage
(Ω)
30
RL
20
10
0
−10
−20
800
XL
850
900
MGD203
950
1000
f (MHz)
V_CE = 4.8 V; I_CQ = 0.01 mA; P_L = 0.6 W; T_s ≤ 60 °C.
Fig.9 Input impedance as a function of frequency
(series components); typical values.
V_CE = 4.8 V; I_CQ = 0.01 mA; P_L = 0.6 W; T_s ≤ 60 °C.
Fig.10 Load impedance as a function of frequency
(series components); typical values.
12
handbook, halfpage
Gp
(dB)
8
4
MGD204
handbook, halfpage
Zi
ZL _MBA451
0
800
850
900
950
1000
f (MHz)
V_CE = 4.8 V; I_CQ = 0.01 mA; P_L = 0.6 W; T_s ≤ 60 °C.
Fig.11 Power gain as a function of
frequency; typical values.
1996 Feb 06
Fig.12 Definition of transistor impedance.
9