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BFG480W Datasheet, PDF (9/16 Pages) NXP Semiconductors – NPN wideband transistor | |||
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Philips Semiconductors
NPN wideband transistor
Product speciï¬cation
BFG480W
Noise data
VCE = 2 V; typical values.
f
IC
(MHz) (mA)
Fmin
(dB)
900
2
1.1
4
1.1
6
1.2
8
1.2
10
1.3
20
1.6
40
2.0
60
2.3
80
2.9
2000 2
2.4
4
2.0
6
1.8
8
1.8
10
1.8
12
1.8
14
1.8
20
1.9
40
2.3
60
2.6
80
2.8
Îmag
0.41
0.31
0.27
0.26
0.28
0.39
0.49
0.57
0.45
0.57
0.49
0.46
0.44
0.43
0.44
0.44
0.46
0.52
0.56
0.60
Îangle
96.1
106.6
118.4
131.7
143.2
166.2
176.0
179.5
177.3
171.9
178.9
â175.7
â171.7
â168.4
â165.3
â163.7
â158.3
â150.2
â147.7
â146.1
rn
(â¦)
0.21
0.14
0.12
0.10
0.10
0.07
0.07
0.07
0.18
0.09
0.08
0.09
0.09
0.09
0.10
0.10
0.11
0.14
0.18
0.22
4
handbook, halfpage
Fmin
(dB)
3
2
1
2 GHz
900 MHz
MGR634
0
0
20
40
60
80
IC (mA)
VCE = 2 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
APPLICATION INFORMATION
RF performance at Ts ⤠60 °C in a common emitter test circuit (see Figs 18 and 19).
MODE OF OPERATION
f
VCE
(GHz)
(V)
ICQ
(mA)
PL
(mW)
Pulsed; class-AB; δ < 1 : 2; tp = 5 ms
2
3.6
1
100
Gp
(dB)
typ. 13.5
ηC
(%)
typ. 45
1998 Oct 21
9
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