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BFG425W Datasheet, PDF (9/12 Pages) NXP Semiconductors – NPN 25 GHz wideband transistor | |||
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Philips Semiconductors
NPN 25 GHz wideband transistor
Product speciï¬cation
BFG425W
SPICE parameters for the BFG425W die
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
47.17 aA
2
BF
145.0 â
3
NF
0.993 â
4
VAF
31.12 V
5
IKF
304.0 mA
6
ISE
300.2 fA
7
NE
3.000 â
8
BR
11.37 â
9
NR
0.985 â
10
VAR
1.874 V
11
IKR
0.121 A
12
ISC
484.8 aA
13
NC
1.546 â
14
RB
14.41 â¦
15
IRB
0.000 A
16
17
18
19 (1)
20 (1)
21 (1)
RBM
RE
RC
XTB
EG
XTI
6.175 â¦
177.9 mâ¦
1.780 â¦
1.500 â
1.110 eV
3.000 â
22
CJE
310.9 fF
23
VJE
900.0 mV
24
MJE
0.346 â
25
TF
4.122 ps
26
XTF
68.20 â
27
VTF
2.004 V
28
ITF
1.525 A
29
PTF
0.000 deg
30
CJC
137.7 fF
31
VJC
556.9 mV
32
33
34 (1)
35 (1)
36 (1)
37 (1)
38
MJC
XCJC
TR
CJS
VJS
MJS
FC
0.207 â
0.500 â
0.000 ns
667.5 fF
418.3 mV
0.239 â
0.550 â
SEQUENCE No. PARAMETER VALUE UNIT
39 (2)(3)
40 (2)
41 (3)
Cbp
Rsb1
Rsb2
145
fF
25
â¦
19
â¦
Notes
1. These parameters have not been extracted, the
default values are shown.
2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between Bâ² and Eâ².
3. Bonding pad capacity Cbp in series with substrate
resistance Rsb2 between Câ² and Eâ².
handbook, halfpage
C cb
L1
B
C be
B' C'
E'
L2
C
Cce
MGD956
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,Eâ(f/fc)
fc = scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343R2.
List of components (see Fig.14)
DESIGNATION
Cbe
Ccb
Cce
L1
L2
L3 (note 1)
VALUE
80
2
80
1.1
1.1
0.25
UNIT
fF
fF
fF
nH
nH
nH
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
1998 Mar 11
9
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