BFG35 Datasheet, PDF (9/16 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFG35
handbook, full pagewidth
50
25
0
10
100
250
+j
0
–j
10
25
50
100
250
10
250
3 GHz
25
100
50
MBB380
I_C = 100 mA; V_CE = 10 V; T_amb = 25 °C; Z_o = 50 Ω.
Fig.13 Common emitter input reflection coefficient (S₁₁).
handbook, full pagewidth
90o
120 ^o
60o
150 ^o
30o
180 ^o
50 40 30 20 10
0o
150 ^o
30o
120 ^o
90o
60o
MBB286
I_C = 100 mA; V_CE = 10 V; T_amb = 25 °C.
Fig.14 Common emitter forward transmission coefficient (S₂₁).
1999 Aug 24
9