TDA8564Q Datasheet, PDF (8/15 Pages) NXP Semiconductors – 2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier

Philips Semiconductors
2 × 24 W BTL or 4 × 12 W single-ended car
radio power amplifier
Preliminary specification
TDA8564Q
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Quad single-ended application (measured in Fig.18)
P_o
P_o
THD
f_lr
f_hr
G_v
SVRR
output power
THD = 0.5%; note 1
4
THD = 10%; note 1
5.5
output power
total harmonic distortion
low frequency roll-off
R_L = 2 Ω; THD = 0.5%; note 1 7.5
R_L = 2 Ω; THD = 10%; note 1 10
P_o = 1 W
−
at −3 dB; note 2
−
high frequency roll-off
at −1 dB
20
closed loop voltage gain
39
supply voltage ripple rejection
5
−
W
6.4
−
W
8.5
−
W
12
−
W
0.15
−
%
45
−
Hz
−
−
kHz
40
41
dB
on
note 3
38
41
−
dB
|Z_i|
V_no
α_cs
|∆G_v|
mute
standby
input impedance
noise output voltage
on
on
mute
channel separation
channel unbalance
note 3
note 3
R_s = 0 Ω; note 4
R_s = 10 kΩ; note 4
notes 4 and 5
R_s = 10 kΩ
42
48
−
dB
80
90
−
dB
50
60
75
kΩ
−
200
300 µV
−
250
−
µV
−
175
−
µV
40
52
−
dB
−
−
1
dB
DYNAMIC DISTORTION DETECTOR
THD
total harmonic distortion
V₁₆ ≤ 0.6 V; no short-circuit
−
10
−
%
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p).
4. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of R_s (V_I = 0 V).
February 1995
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