TDA5731M Datasheet, PDF (8/17 Pages) NXP Semiconductors – Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners

Philips Semiconductors
Low power VHF, UHF and hyperband
mixer/oscillator for TV and VCR 3-band tuners
Product specification
TDA5731M
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Band C oscillator
f_R
f_shiift
χ_ripple(p-p)
frequency range
frequency shift
ripple susceptibility of supply
voltage (peak-to-peak value)
T_amb = −10 to +80 °C;
V_P = 4.5 to 5.5 V;
V_tune = 0.45 to 28 V
∆V_P = ±5%; note 3
f_i = 485 MHz; note 4
485
−
−
−
20
−
f_ripple(p-p)
f_drift
frequency ripple
(peak-to-peak value)
frequency drift
from 20 Hz to 500 kHz;
f_i = 900 MHz
without compensation;
notes 5 and 6
10
−
−
−
5 s to 15 min after switching on; −
−
without compensation; note 7
900
MHz
400
kHz
−
mV
−
mV
2.5
MHz
600
kHz
LO output
Y_O
V_o
SRF
output admittance (G_P//C_P) f_i = 80 MHz; see Fig.10
−
f_i = 80 MHz; see Fig.10
−
f_i = 900 MHz; see Fig.10
−
f_i = 900 MHz; see Fig.10
−
output voltage
R_L = 50 Ω; T_amb = −10 to +80 °C; 80
V_P = 4.5 to 5.5 V;
spurious signal on LO output R_L = 50 Ω; T_amb = −10 to +80 °C; −
with respect to LO output
V_P = 4.5 to 5.5 V; note 10
signal
2.4 −
0.9 −
4.6 −
0.9 −
91
100
−
−10
mS
pF
mS
pF
dBµV
dB
HLO
LO signal harmonics with
respect to LO signal
R_L = 50 Ω; T_amb = −10 to +80 °C; −
V_P = 4.5 to 5.5 V;
−
−10
dB
Notes
1. Cross modulation measurement is achieved using the 3 equal signals method (see Fig.4).
2. The gain is defined as the transducer gain (measured in Fig.8) plus the voltage transformation ratio of L7 to L8
(5 : 1, 15.4 dB).
3. The frequency shift is defined as a change in oscillator frequency for a variation of supply voltage. In one instance
V_P = 5 to 4.75 V and in the other instance V_P = 5 to 5.25 V. In both cases, the frequency shift is below the specified
value.
4. The frequency ripple susceptibility is measured at 500 kHz at the LO output (see Fig.5). The level of the ripple signal
is increased until a difference of 53.5 dB is reached at the IF output.
5. The frequency drift is defined as the change in oscillator frequency for a variation of ambient temperature, on the one
hand from T_amb = 25 °C to T_amb = 0 °C and on the other hand from T_amb = 25 °C to T_amb = 50 °C.
6. The capacitors in the oscillator circuits of Fig.8 are as follows:
a) Band A: C1, C5 and C7.
b) Band B: C4 and C9 and C11.
c) Band C: C2, C3, C6, C8 and C10 are NP0 types.
7. Switching on drift is the change in oscillator frequency between 5 seconds and 15 minutes after switching on.
8. The values have been corrected for hybrid and cable losses. The symmetrical output impedance of the circuit is
100 Ω.
1995 Mar 21
8