TDA4655 Datasheet, PDF (8/17 Pages) NXP Semiconductors – Generic multi-standard decoder

Philips Semiconductors
Generic multi-standard decoder
Preliminary specification
TDA4655
SYMBOL
PARAMETER
CONDITIONS
f_g
cut-off frequency
t_d
chrominance delay time
S/N
signal to noise ratio for 100 mV (p-p) input
signal and nominal output voltages
V_1, V₃
residual carrier at CD outputs:
1 × subcarrier frequency
(peak-to-peak value)
2 × subcarrier frequency
(peak-to-peak value)
∆V₃
shift of demodulated f₀ level relative to
blanking level −(B-Y) output
∆V₁
−(R-Y) output
Impedance and currents see PAL or NTSC specification
−3 dB
note 3
note 9
Capacitor for SECAM de-emphasis (pin 2)
C₂
R_A
R_B
∆(R_A/R_B)
value of external capacitor
value of internal de-emphasis resistors
T_amb = +35 °C
relative tolerance of de-emphasis resistors
Capacitors for SECAM demodulator control (pins 4 and 10; note 6)
∆V_{1, 3}
shift of demodulated f₀ level due to
external leakage current
C_ext = 220 nF
Resistor for SECAM oscillator (pin 7)
V₇
DC voltage
R₇
value of external resistor (±1%)
C₇
value of external capacitor (±20%)
Chrominance input (pin 11)
V₁₁
input signal (peak-to-peak value)
R₁₁
input resistance
C₁₁
input capacitance
Capacitor for ACC (pin 12; note 8)
note 7
∆V_{1, 3}
change of CD output signals during field C_ext = 100 nF
blanking due to external leakage current
Hue control (NTSC) and service switch (pin 13)
φ
phase shift of reference carrier relative to V₁₃ = 3 V
phase at open-circuit pin 13
V₁₃ = open circuit
V₁₃ = 5 V
V₁₃
internal bias voltage
pin 13 open circuit
(proportional to supply voltage)
R₁₃
input resistance
MIN.
−
400
40
TYP.
730
500
−
MAX. UNIT
−
kHz
600 ns
−
dB
−
−
10
mV
−
−
20
mV
−
0
±13 mV
−
0
±10 mV
−
220 −
pF
2.4 2.8 3.2 kΩ
4.8 5.6 6.4 kΩ
−
−
±5
%
−
−
0.3 mV/nA
2.4 2.81 3.2 V
−
5.62 −
kΩ
-
10
-
nF
20
200 400 mV
16
20
24
kΩ
−
−
10
pF
−
0.2 −
%/nA
−30 −
−
°
−5
0
+5
°
+30 −
−
°
3.8 4.0 4.2 V
25
30
35
kΩ
June 1993
8