SA1921 Datasheet, PDF (8/36 Pages) NXP Semiconductors – Satellite and cellular dual-band RF front-end

Philips Semiconductors
Satellite and cellular dual-band RF front-end
Product specification
SA1921
AC ELECTRICAL CHARACTERISTICS
Low-Band, Dual Mode of Operation
V_CC = +3.75 V, Freq_RF = 943 MHz, Freq_LO = 1106 MHz, P_LOin = –3 dBm, T_A = +25_C; unless otherwise stated.
PARAMETERS
Min
–3s
TYP
+3s
System
RF Input Frequency Range
869
943
IF Frequency
163
LO Frequency
1032
1106
Cascaded Power Gain; includes 3dB filter loss
21.4 22.5 23.6
Power Gain Reduction (Strong Signal Mode—LNA Off)
30
36
42
Cascaded Noise Figure; includes 3dB filter loss
2.6
LNA
LNA Gain
17.6 18.3
19
LNA IIP3 (60 kHz spacing)
–6.0 –5.0 –4.0
LNA IIP3 (200 kHz spacing)
–3.0
LNA Noise Figure
1.6
1.7
1.8
LNA 1 dB RF Input Compression Point
–21.0
Mixer
Mixer Gain
6.9
7.2
7.5
Mixer IIP3 (60 kHz spacing)
4.0
5.0
6.0
Mixer Noise Figure
10.4
11.0
11.6
Mixer 1 dB RF Input Compression Point
–13.0
Other
Input Impedance, RF Port
50
Return Loss at LNA Inputs and Output
Return Loss at Mixer Input and Outputs
LO leakage at RF Port
–42
LO Input Power
–5
–3
–1
Turn ON/OFF Time
100
Max UNITS NOTES
960
1123
MHz
MHz
MHz
dB
dB
dB
dB
dBm
dBm
dB
dBm
dB
dBm
dB
dBm
W
–10
dB
1
–10
dB
1
dBm
dBm
msec
Low-Band LO Buffer
V_CC = +3.75 V, Freq_LO = 1106 MHz, P_LOin = –3 dBm, T_A = +25_C; unless otherwise stated.
PARAMETERS
Min
–3s
TYP.
+3s
Max UNITS NOTES
LO Frequency
1032
1106
1123 MHz
Differential Output Power
–7
dBm
Differential Output Impedance
100
W
Harmonic Content
–20
dBc
Input Power
–5
–3
–1
dBm
Input Impedance
50
W
1
Turn On/Off Time
10
msec
NOTE:
1. External matching network is required.
1999 Mar 02
8