PSMN015-60BS Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 60 V 14.8 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN015-60BS
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
60
R_DSon
(mΩ)
45
V_GS(V) = 4.5
4.7
003aae037
30
5.5
15
6.5
10
0
0
15
30
45
60
I _D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
8
6
4
2
V_DS = 30 V
12 V
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48 V
10⁴
C
(pF)
10³
10²
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C_iss
C_oss
C_rss
0
0
10
20
30
Q_G (nC)
10
10^-1
1
10
10²
V_DS(V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN015-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
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