PMZB550UNE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 30 V, N-channel Trench MOSFET

NXP Semiconductors
PMZB550UNE
30 V, N-channel Trench MOSFET
1.0
I_D
(A)
0.8
aaa-017181
2.0
a
1.5
aaa-017182
0.6
1.0
T_j = 150 °C
0.4
0.5
0.2
T_j = 25 °C
0
0
1
2
V_DS > I_D × R_DSon
3
4
V_GS (V)
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
1.5
V_GS(th)
(V)
1.0
0.5
aaa-017183
(1)
(2)
(3)
10²
C
(pF)
10
aaa-017184
(1)
(2)
(3)
0
-60
0
60
I_D = 0.25 mA; V_DS = V_GS
(1) maximum values
(2) typical values
(3) minimum values
120
180
T_j (°C)
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
1
10^-1
1
10
10²
V_DS (V)
f = 1 MHz; V_GS = 0 V
(1) C_iss
(2) C_oss
(3) C_rss
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMZB550UNE
Product data sheet
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25 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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