PMZ390UNE_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – 30 V, N-channel Trench MOSFET

NXP Semiconductors
4
I_D
(A)
3
2
aaa-015991
T_j = 25 °C T_j = 150 °C
PMZ390UNE
30 V, N-channel Trench MOSFET
2.0
a
1.5
aaa-015992
1.0
1
0.5
0
0
1
2
V_DS > I_D × R_DSon
3
4
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.0
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
1.5
V_GS(th)
(V)
1.0
0.5
aaa-015993
max
typ
min
10²
C
(pF)
10
aaa-015994
C_iss
C_oss
C_rss
0.0
-60
0
60
I_D = 0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
1
10^-1
1
f = 1 MHz; V_GS = 0 V
10
10²
V_DS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMZ390UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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